ENTRY O2322 20170127 O060O232200000001 SUBENT O2322001 20170127 O060O232200100001 BIB 11 19 O232200100002 TITLE Characterization and validation of a-Si magnetron- O232200100003 sputtered thin films as solid He targets with high O232200100004 stability for nuclear reactions. O232200100005 AUTHOR (V.Godinho,F.J.Ferrer,B.Fernandez, O232200100006 J.Caballero-Hernandez,J.Goimez-Camacho,A.Fernandez) O232200100007 INSTITUTE (2SPNSEU) O232200100008 REFERENCE (J,ACSOM,1,1229,2016) O232200100009 FACILITY (VDGT,2SPNSEU) O232200100010 DETECTOR (IMPSI) a passivated implanted planar silicon (PIPS) O232200100011 detector. O232200100012 SAMPLE Amorphous silicon coatings with closed porosity, as a O232200100013 strategy to fabricate solid helium targets, in the formO232200100014 of supported or self-supported thin films such as O232200100015 Au/a-Si-He/Si, were used. O232200100016 METHOD (EDE,BCINT) O232200100017 ERR-ANALYS (DATA-ERR).No information on source of uncertianty O232200100018 STATUS (TABLE) Table data was received from Dr.J.Ferrer O232200100019 for J,ACSOM,1,1229,2016 O232200100020 HISTORY (20170130C) S.B O232200100021 ENDBIB 19 0 O232200100022 NOCOMMON 0 0 O232200100023 ENDSUBENT 22 0 O232200199999 SUBENT O2322002 20170127 O060O232200200001 BIB 1 1 O232200200002 REACTION (2-HE-4(P,EL)2-HE-4,,DA) O232200200003 ENDBIB 1 0 O232200200004 COMMON 1 3 O232200200005 ANG O232200200006 ADEG O232200200007 110. O232200200008 ENDCOMMON 3 0 O232200200009 DATA 3 25 O232200200010 EN DATA DATA-ERR O232200200011 MEV B/SR B/SR O232200200012 0.596 0.138 0.008 O232200200013 0.696 0.114 0.007 O232200200014 0.794 0.074 0.006 O232200200015 0.899 0.083 0.006 O232200200016 1.000 0.083 0.005 O232200200017 1.098 0.091 0.005 O232200200018 1.199 0.100 0.005 O232200200019 1.301 0.110 0.005 O232200200020 1.380 0.118 0.005 O232200200021 1.502 0.130 0.006 O232200200022 1.605 0.152 0.007 O232200200023 1.701 0.169 0.007 O232200200024 1.806 0.192 0.008 O232200200025 1.902 0.194 0.008 O232200200026 2.014 0.212 0.008 O232200200027 2.103 0.213 0.009 O232200200028 2.203 0.211 0.009 O232200200029 2.305 0.203 0.008 O232200200030 2.404 0.200 0.009 O232200200031 2.506 0.193 0.008 O232200200032 2.606 0.170 0.007 O232200200033 2.705 0.153 0.007 O232200200034 2.805 0.146 0.006 O232200200035 2.905 0.142 0.006 O232200200036 3.005 0.126 0.006 O232200200037 ENDDATA 27 0 O232200200038 ENDSUBENT 37 0 O232200299999 SUBENT O2322003 20170127 O060O232200300001 BIB 1 1 O232200300002 REACTION (2-HE-4(P,EL)2-HE-4,,DA) O232200300003 ENDBIB 1 0 O232200300004 COMMON 1 3 O232200300005 ANG O232200300006 ADEG O232200300007 135. O232200300008 ENDCOMMON 3 0 O232200300009 DATA 3 25 O232200300010 EN DATA DATA-ERR O232200300011 MEV B/SR B/SR O232200300012 0.596 0.064 0.006 O232200300013 0.696 0.073 0.006 O232200300014 0.794 0.073 0.005 O232200300015 0.899 0.074 0.005 O232200300016 1.000 0.086 0.005 O232200300017 1.098 0.079 0.005 O232200300018 1.199 0.103 0.004 O232200300019 1.301 0.116 0.005 O232200300020 1.380 0.118 0.005 O232200300021 1.502 0.140 0.006 O232200300022 1.605 0.165 0.007 O232200300023 1.701 0.192 0.008 O232200300024 1.806 0.217 0.009 O232200300025 1.902 0.226 0.009 O232200300026 2.014 0.243 0.010 O232200300027 2.103 0.247 0.010 O232200300028 2.203 0.248 0.010 O232200300029 2.305 0.247 0.010 O232200300030 2.404 0.242 0.010 O232200300031 2.506 0.211 0.009 O232200300032 2.606 0.209 0.009 O232200300033 2.705 0.202 0.009 O232200300034 2.805 0.181 0.008 O232200300035 2.905 0.173 0.007 O232200300036 3.005 0.154 0.007 O232200300037 ENDDATA 27 0 O232200300038 ENDSUBENT 37 0 O232200399999 SUBENT O2322004 20170127 O060O232200400001 BIB 1 1 O232200400002 REACTION (2-HE-4(P,EL)2-HE-4,,DA) O232200400003 ENDBIB 1 0 O232200400004 COMMON 1 3 O232200400005 ANG O232200400006 ADEG O232200400007 150. O232200400008 ENDCOMMON 3 0 O232200400009 DATA 3 25 O232200400010 EN DATA DATA-ERR O232200400011 MEV B/SR B/SR O232200400012 0.596 0.044 0.005 O232200400013 0.696 0.061 0.005 O232200400014 0.794 0.067 0.005 O232200400015 0.899 0.073 0.004 O232200400016 1.000 0.080 0.005 O232200400017 1.098 0.083 0.004 O232200400018 1.199 0.084 0.004 O232200400019 1.301 0.105 0.005 O232200400020 1.380 0.123 0.005 O232200400021 1.502 0.144 0.006 O232200400022 1.605 0.166 0.007 O232200400023 1.701 0.185 0.008 O232200400024 1.806 0.221 0.009 O232200400025 1.902 0.239 0.010 O232200400026 2.014 0.259 0.011 O232200400027 2.103 0.269 0.011 O232200400028 2.203 0.267 0.011 O232200400029 2.305 0.259 0.011 O232200400030 2.404 0.253 0.011 O232200400031 2.506 0.239 0.010 O232200400032 2.606 0.208 0.009 O232200400033 2.705 0.200 0.009 O232200400034 2.805 0.187 0.008 O232200400035 2.905 0.176 0.008 O232200400036 3.005 0.154 0.007 O232200400037 ENDDATA 27 0 O232200400038 ENDSUBENT 37 0 O232200499999 SUBENT O2322005 20170127 O060O232200500001 BIB 1 1 O232200500002 REACTION (2-HE-4(P,EL)2-HE-4,,DA) O232200500003 ENDBIB 1 0 O232200500004 COMMON 1 3 O232200500005 ANG O232200500006 ADEG O232200500007 165. O232200500008 ENDCOMMON 3 0 O232200500009 DATA 3 25 O232200500010 EN DATA DATA-ERR O232200500011 MEV B/SR B/SR O232200500012 0.596 0.056 0.005 O232200500013 0.696 0.056 0.005 O232200500014 0.794 0.069 0.004 O232200500015 0.899 0.072 0.004 O232200500016 1.000 0.068 0.004 O232200500017 1.098 0.077 0.004 O232200500018 1.199 0.096 0.005 O232200500019 1.301 0.108 0.005 O232200500020 1.380 0.125 0.005 O232200500021 1.502 0.145 0.006 O232200500022 1.605 0.167 0.007 O232200500023 1.701 0.181 0.008 O232200500024 1.806 0.222 0.009 O232200500025 1.902 0.230 0.010 O232200500026 2.014 0.254 0.011 O232200500027 2.103 0.271 0.011 O232200500028 2.203 0.276 0.012 O232200500029 2.305 0.265 0.011 O232200500030 2.404 0.261 0.011 O232200500031 2.506 0.256 0.011 O232200500032 2.606 0.222 0.010 O232200500033 2.705 0.201 0.009 O232200500034 2.805 0.200 0.009 O232200500035 2.905 0.175 0.008 O232200500036 3.005 0.165 0.007 O232200500037 ENDDATA 27 0 O232200500038 ENDSUBENT 37 0 O232200599999 ENDENTRY 5 0 O232299999999