ENTRY F1233 20140918 F056F123300000001 SUBENT F1233001 20140918 F056F123300100001 BIB 11 28 F123300100002 TITLE Experimental determination of the cross sections F123300100003 of nuclear reactions by the method of analysis of F123300100004 the concentration profiles of transmutation nuclides. F123300100005 AUTHOR (V.A.Didik,R.Sh.Malkovich,E.A.Skoryatina, F123300100006 V.V.Kozlovskii) F123300100007 INSTITUTE (4RUSFTI) F123300100008 (4RUSRUS) NII "Giricond". F123300100009 REFERENCE (J,AE,77,(1),81,1994) F123300100010 (J,AE/T,77,(1),570,1994) English translation F123300100011 FACILITY (CYCLO,4RUSFTI) F123300100012 SAMPLE Plane-parallel targets were placed on a brass holder. F123300100013 Layers of 2-10 mm thickness were measured. F123300100014 DETECTOR (GELI) Gamma activity was measured by Ge(Li) detector. F123300100015 METHOD (ACTIV) Irradiation time was 1-5 hours. F123300100016 (GSPEC) F123300100017 INC-SOURCE Diameter of the beam was 1.1 cm, energy of particles F123300100018 was 20 MeV, density of beam flux was 6*10**11 and F123300100019 1.2*10**12 1/(s*cm2), monochromaticy of beam was not F123300100020 worse than 5%. F123300100021 ERR-ANALYS (DATA-ERR) Error of reaction cross section. F123300100022 (ERR-1) Beam flux determination error. F123300100023 (ERR-2) Layer activity determination error. F123300100024 (ERR-3) Gamma-detector efficiency error. F123300100025 (ERR-4) Layer thickness error. F123300100026 (ERR-5) Other errors. F123300100027 (EN-ERR-DIG)Energy digitizing error. F123300100028 (ERR-DIG) Data digitizing error. F123300100029 HISTORY (20140918C) F123300100030 ENDBIB 28 0 F123300100031 COMMON 6 3 F123300100032 DATA-ERR ERR-1 ERR-2 ERR-3 ERR-4 ERR-5 F123300100033 PER-CENT PER-CENT PER-CENT PER-CENT PER-CENT PER-CENT F123300100034 15. 7. 5. 5. 3. 10.F123300100035 ENDCOMMON 3 0 F123300100036 ENDSUBENT 35 0 F123300199999 SUBENT F1233002 20140918 F056F123300200001 BIB 4 4 F123300200002 REACTION (31-GA-69(A,2N)33-AS-71,,SIG) F123300200003 DECAY-DATA (33-AS-71,,DG) F123300200004 SAMPLE Semiconductor compound of GaAs was used. F123300200005 STATUS (CURVE) Figure 2 from the reference. F123300200006 ENDBIB 4 0 F123300200007 COMMON 2 3 F123300200008 EN-ERR-DIG ERR-DIG F123300200009 MEV PER-CENT F123300200010 0.012 0.35 F123300200011 ENDCOMMON 3 0 F123300200012 DATA 2 32 F123300200013 EN DATA F123300200014 MEV MB F123300200015 16.578 1.559E+01 F123300200016 16.631 1.711E+01 F123300200017 16.683 1.877E+01 F123300200018 16.758 2.058E+01 F123300200019 16.833 2.281E+01 F123300200020 16.886 2.502E+01 F123300200021 16.961 2.773E+01 F123300200022 17.060 3.104E+01 F123300200023 17.136 3.476E+01 F123300200024 17.211 3.812E+01 F123300200025 17.307 4.135E+01 F123300200026 17.406 4.629E+01 F123300200027 17.482 5.183E+01 F123300200028 17.580 5.682E+01 F123300200029 17.677 6.229E+01 F123300200030 17.751 6.831E+01 F123300200031 17.873 7.643E+01 F123300200032 17.970 8.379E+01 F123300200033 18.090 9.279E+01 F123300200034 18.188 1.028E+02 F123300200035 18.285 1.115E+02 F123300200036 18.382 1.223E+02 F123300200037 18.501 1.326E+02 F123300200038 18.598 1.454E+02 F123300200039 18.694 1.577E+02 F123300200040 18.814 1.728E+02 F123300200041 18.955 1.874E+02 F123300200042 19.074 2.053E+02 F123300200043 19.192 2.204E+02 F123300200044 19.265 2.343E+02 F123300200045 19.337 2.491E+02 F123300200046 19.454 2.646E+02 F123300200047 ENDDATA 34 0 F123300200048 ENDSUBENT 47 0 F123300299999 SUBENT F1233003 20140918 F056F123300300001 BIB 4 4 F123300300002 REACTION (31-GA-69(A,2N)33-AS-71,,SIG) F123300300003 DECAY-DATA (33-AS-71,,DG) F123300300004 SAMPLE Semiconductor compound of GaP was used. F123300300005 STATUS (CURVE) Figure 2 from the reference. F123300300006 ENDBIB 4 0 F123300300007 COMMON 2 3 F123300300008 EN-ERR-DIG ERR-DIG F123300300009 MEV PER-CENT F123300300010 0.012 0.35 F123300300011 ENDCOMMON 3 0 F123300300012 DATA 2 30 F123300300013 EN DATA F123300300014 MEV MB F123300300015 16.486 2.004E+01 F123300300016 16.561 2.198E+01 F123300300017 16.614 2.437E+01 F123300300018 16.688 2.672E+01 F123300300019 16.763 2.931E+01 F123300300020 16.815 3.216E+01 F123300300021 16.889 3.490E+01 F123300300022 16.964 3.828E+01 F123300300023 17.039 4.198E+01 F123300300024 17.113 4.604E+01 F123300300025 17.211 5.047E+01 F123300300026 17.285 5.535E+01 F123300300027 17.383 6.131E+01 F123300300028 17.480 6.652E+01 F123300300029 17.577 7.293E+01 F123300300030 17.673 7.912E+01 F123300300031 17.794 8.853E+01 F123300300032 17.913 9.601E+01 F123300300033 18.056 1.063E+02 F123300300034 18.199 1.176E+02 F123300300035 18.296 1.290E+02 F123300300036 18.460 1.398E+02 F123300300037 18.601 1.515E+02 F123300300038 18.696 1.627E+02 F123300300039 18.883 1.781E+02 F123300300040 19.025 1.931E+02 F123300300041 19.164 2.050E+02 F123300300042 19.236 2.157E+02 F123300300043 19.351 2.244E+02 F123300300044 19.467 2.359E+02 F123300300045 ENDDATA 32 0 F123300300046 ENDSUBENT 45 0 F123300399999 SUBENT F1233004 20140918 F056F123300400001 BIB 4 4 F123300400002 REACTION (31-GA-69(A,N)33-AS-72,,SIG) F123300400003 DECAY-DATA (33-AS-72,,DG) F123300400004 SAMPLE Semiconductor compound of GaAs was used. F123300400005 STATUS (CURVE) Figure 2 from the reference. F123300400006 ENDBIB 4 0 F123300400007 COMMON 2 3 F123300400008 EN-ERR-DIG ERR-DIG F123300400009 MEV PER-CENT F123300400010 0.011 0.45 F123300400011 ENDCOMMON 3 0 F123300400012 DATA 2 59 F123300400013 EN DATA F123300400014 MEV MB F123300400015 8.082 1.165E+01 F123300400016 8.094 1.267E+01 F123300400017 8.108 1.393E+01 F123300400018 8.216 1.547E+01 F123300400019 8.229 1.701E+01 F123300400020 8.291 1.889E+01 F123300400021 8.351 2.077E+01 F123300400022 8.412 2.307E+01 F123300400023 8.474 2.562E+01 F123300400024 8.535 2.846E+01 F123300400025 8.595 3.128E+01 F123300400026 8.702 3.473E+01 F123300400027 8.716 3.819E+01 F123300400028 8.776 4.197E+01 F123300400029 8.883 4.660E+01 F123300400030 8.945 5.176E+01 F123300400031 8.957 5.632E+01 F123300400032 9.066 6.319E+01 F123300400033 9.175 7.091E+01 F123300400034 9.186 7.634E+01 F123300400035 9.244 8.302E+01 F123300400036 9.352 9.219E+01 F123300400037 9.457 1.013E+02 F123300400038 9.562 1.101E+02 F123300400039 9.669 1.223E+02 F123300400040 9.819 1.329E+02 F123300400041 10.017 1.459E+02 F123300400042 10.170 1.619E+02 F123300400043 10.319 1.742E+02 F123300400044 10.562 1.911E+02 F123300400045 10.758 2.077E+02 F123300400046 10.954 2.256E+02 F123300400047 11.195 2.424E+02 F123300400048 11.388 2.579E+02 F123300400049 11.535 2.744E+02 F123300400050 11.774 2.918E+02 F123300400051 12.061 3.168E+02 F123300400052 12.300 3.369E+02 F123300400053 12.541 3.621E+02 F123300400054 12.827 3.889E+02 F123300400055 13.159 4.177E+02 F123300400056 13.492 4.485E+02 F123300400057 13.822 4.766E+02 F123300400058 14.152 5.012E+02 F123300400059 14.479 5.214E+02 F123300400060 14.808 5.483E+02 F123300400061 15.180 5.643E+02 F123300400062 15.601 5.929E+02 F123300400063 16.018 6.036E+02 F123300400064 16.344 6.215E+02 F123300400065 16.759 6.260E+02 F123300400066 17.218 6.238E+02 F123300400067 17.631 6.218E+02 F123300400068 17.994 6.007E+02 F123300400069 18.312 5.868E+02 F123300400070 18.673 5.609E+02 F123300400071 18.945 5.480E+02 F123300400072 19.172 5.357E+02 F123300400073 19.620 4.958E+02 F123300400074 ENDDATA 61 0 F123300400075 ENDSUBENT 74 0 F123300499999 SUBENT F1233005 20140918 F056F123300500001 BIB 4 4 F123300500002 REACTION (31-GA-69(A,N)33-AS-72,,SIG) F123300500003 DECAY-DATA (33-AS-72,,DG) F123300500004 SAMPLE Semiconductor compound of GaP was used. F123300500005 STATUS (CURVE) Figure 2 from the reference. F123300500006 ENDBIB 4 0 F123300500007 COMMON 2 3 F123300500008 EN-ERR-DIG ERR-DIG F123300500009 MEV PER-CENT F123300500010 0.011 0.45 F123300500011 ENDCOMMON 3 0 F123300500012 DATA 2 56 F123300500013 EN DATA F123300500014 MEV MB F123300500015 7.426 2.005E+01 F123300500016 7.439 2.182E+01 F123300500017 7.543 2.372E+01 F123300500018 7.601 2.579E+01 F123300500019 7.660 2.805E+01 F123300500020 7.719 3.083E+01 F123300500021 7.827 3.424E+01 F123300500022 7.934 3.801E+01 F123300500023 8.040 4.177E+01 F123300500024 8.147 4.638E+01 F123300500025 8.255 5.149E+01 F123300500026 8.359 5.598E+01 F123300500027 8.466 6.216E+01 F123300500028 8.619 6.900E+01 F123300500029 8.727 7.661E+01 F123300500030 8.882 8.594E+01 F123300500031 8.941 9.445E+01 F123300500032 9.093 1.037E+02 F123300500033 9.197 1.128E+02 F123300500034 9.300 1.213E+02 F123300500035 9.453 1.347E+02 F123300500036 9.607 1.495E+02 F123300500037 9.758 1.642E+02 F123300500038 9.958 1.822E+02 F123300500039 10.108 1.980E+02 F123300500040 10.255 2.107E+02 F123300500041 10.403 2.266E+02 F123300500042 10.650 2.540E+02 F123300500043 10.848 2.788E+02 F123300500044 11.135 3.027E+02 F123300500045 11.330 3.254E+02 F123300500046 11.619 3.570E+02 F123300500047 11.858 3.797E+02 F123300500048 12.096 3.995E+02 F123300500049 12.333 4.204E+02 F123300500050 12.615 4.375E+02 F123300500051 12.850 4.556E+02 F123300500052 13.086 4.743E+02 F123300500053 13.368 4.937E+02 F123300500054 13.696 5.137E+02 F123300500055 14.113 5.285E+02 F123300500056 14.531 5.437E+02 F123300500057 14.994 5.533E+02 F123300500058 15.502 5.629E+02 F123300500059 15.825 5.674E+02 F123300500060 16.146 5.660E+02 F123300500061 16.559 5.642E+02 F123300500062 16.925 5.567E+02 F123300500063 17.289 5.435E+02 F123300500064 17.744 5.248E+02 F123300500065 18.154 5.122E+02 F123300500066 18.469 4.898E+02 F123300500067 18.832 4.732E+02 F123300500068 19.146 4.478E+02 F123300500069 19.461 4.283E+02 F123300500070 19.774 4.053E+02 F123300500071 ENDDATA 58 0 F123300500072 ENDSUBENT 71 0 F123300599999 SUBENT F1233006 20140918 F056F123300600001 BIB 4 4 F123300600002 REACTION (31-GA-71(A,N)33-AS-74,,SIG) F123300600003 DECAY-DATA (33-AS-74,,DG) F123300600004 SAMPLE Semiconductor compound of GaAs was used. F123300600005 STATUS (CURVE) Figure 2 from the reference. F123300600006 ENDBIB 4 0 F123300600007 COMMON 2 3 F123300600008 EN-ERR-DIG ERR-DIG F123300600009 MEV PER-CENT F123300600010 0.019 0.65 F123300600011 ENDCOMMON 3 0 F123300600012 DATA 2 65 F123300600013 EN DATA F123300600014 MEV MB F123300600015 7.875 1.285E+01 F123300600016 7.934 1.412E+01 F123300600017 7.994 1.569E+01 F123300600018 8.054 1.743E+01 F123300600019 8.111 1.896E+01 F123300600020 8.168 2.063E+01 F123300600021 8.228 2.292E+01 F123300600022 8.284 2.467E+01 F123300600023 8.342 2.712E+01 F123300600024 8.400 2.950E+01 F123300600025 8.455 3.175E+01 F123300600026 8.514 3.491E+01 F123300600027 8.570 3.757E+01 F123300600028 8.625 4.044E+01 F123300600029 8.681 4.353E+01 F123300600030 8.737 4.685E+01 F123300600031 8.794 5.097E+01 F123300600032 8.848 5.428E+01 F123300600033 8.904 5.843E+01 F123300600034 8.960 6.289E+01 F123300600035 9.012 6.628E+01 F123300600036 9.068 7.134E+01 F123300600037 9.124 7.678E+01 F123300600038 9.177 8.092E+01 F123300600039 9.231 8.618E+01 F123300600040 9.284 9.083E+01 F123300600041 9.390 1.009E+02 F123300600042 9.498 1.144E+02 F123300600043 9.601 1.244E+02 F123300600044 9.747 1.324E+02 F123300600045 9.851 1.456E+02 F123300600046 10.002 1.616E+02 F123300600047 10.151 1.757E+02 F123300600048 10.348 1.950E+02 F123300600049 10.543 2.141E+02 F123300600050 10.739 2.352E+02 F123300600051 10.934 2.583E+02 F123300600052 11.126 2.748E+02 F123300600053 11.364 2.954E+02 F123300600054 11.602 3.175E+02 F123300600055 11.886 3.412E+02 F123300600056 12.123 3.629E+02 F123300600057 12.359 3.819E+02 F123300600058 12.641 4.061E+02 F123300600059 13.015 4.315E+02 F123300600060 13.342 4.539E+02 F123300600061 13.667 4.723E+02 F123300600062 14.037 4.863E+02 F123300600063 14.498 5.002E+02 F123300600064 14.864 5.042E+02 F123300600065 15.275 5.027E+02 F123300600066 15.639 4.961E+02 F123300600067 16.093 4.841E+02 F123300600068 16.453 4.678E+02 F123300600069 16.677 4.524E+02 F123300600070 16.990 4.282E+02 F123300600071 17.212 4.098E+02 F123300600072 17.523 3.837E+02 F123300600073 17.743 3.596E+02 F123300600074 17.964 3.405E+02 F123300600075 18.226 3.123E+02 F123300600076 18.446 2.926E+02 F123300600077 18.713 2.770E+02 F123300600078 18.885 2.569E+02 F123300600079 19.103 2.382E+02 F123300600080 ENDDATA 67 0 F123300600081 ENDSUBENT 80 0 F123300699999 SUBENT F1233007 20140918 F056F123300700001 BIB 4 4 F123300700002 REACTION (31-GA-71(A,N)33-AS-74,,SIG) F123300700003 DECAY-DATA (33-AS-74,,DG) F123300700004 SAMPLE Semiconductor compound of GaP was used. F123300700005 STATUS (CURVE) Figure 2 from the reference. F123300700006 ENDBIB 4 0 F123300700007 COMMON 2 3 F123300700008 EN-ERR-DIG ERR-DIG F123300700009 MEV PER-CENT F123300700010 0.019 0.65 F123300700011 ENDCOMMON 3 0 F123300700012 DATA 2 67 F123300700013 EN DATA F123300700014 MEV MB F123300700015 6.960 1.280E+01 F123300700016 7.021 1.422E+01 F123300700017 7.075 1.514E+01 F123300700018 7.128 1.596E+01 F123300700019 7.183 1.718E+01 F123300700020 7.243 1.908E+01 F123300700021 7.349 2.120E+01 F123300700022 7.451 2.281E+01 F123300700023 7.556 2.533E+01 F123300700024 7.663 2.843E+01 F123300700025 7.769 3.158E+01 F123300700026 7.873 3.470E+01 F123300700027 7.978 3.814E+01 F123300700028 8.035 4.148E+01 F123300700029 8.136 4.464E+01 F123300700030 8.192 4.804E+01 F123300700031 8.342 5.278E+01 F123300700032 8.445 5.740E+01 F123300700033 8.503 6.310E+01 F123300700034 8.607 6.934E+01 F123300700035 8.709 7.461E+01 F123300700036 8.812 8.114E+01 F123300700037 8.914 8.823E+01 F123300700038 9.020 9.799E+01 F123300700039 9.123 1.066E+02 F123300700040 9.226 1.159E+02 F123300700041 9.330 1.273E+02 F123300700042 9.434 1.399E+02 F123300700043 9.586 1.554E+02 F123300700044 9.737 1.725E+02 F123300700045 9.838 1.856E+02 F123300700046 9.941 2.019E+02 F123300700047 10.093 2.241E+02 F123300700048 10.290 2.487E+02 F123300700049 10.485 2.732E+02 F123300700050 10.678 2.937E+02 F123300700051 10.870 3.159E+02 F123300700052 11.065 3.432E+02 F123300700053 11.303 3.690E+02 F123300700054 11.585 3.923E+02 F123300700055 11.824 4.217E+02 F123300700056 12.155 4.578E+02 F123300700057 12.439 4.920E+02 F123300700058 12.813 5.227E+02 F123300700059 13.232 5.553E+02 F123300700060 13.695 5.773E+02 F123300700061 14.155 5.939E+02 F123300700062 14.703 5.915E+02 F123300700063 15.157 5.772E+02 F123300700064 15.563 5.576E+02 F123300700065 15.877 5.333E+02 F123300700066 16.190 5.047E+02 F123300700067 16.502 4.776E+02 F123300700068 16.856 4.377E+02 F123300700069 17.343 3.924E+02 F123300700070 17.606 3.599E+02 F123300700071 17.781 3.409E+02 F123300700072 18.002 3.229E+02 F123300700073 18.132 3.060E+02 F123300700074 18.355 2.928E+02 F123300700075 18.574 2.744E+02 F123300700076 18.792 2.544E+02 F123300700077 19.055 2.333E+02 F123300700078 19.274 2.186E+02 F123300700079 19.447 2.028E+02 F123300700080 19.665 1.880E+02 F123300700081 19.885 1.762E+02 F123300700082 ENDDATA 69 0 F123300700083 ENDSUBENT 82 0 F123300799999 SUBENT F1233008 20140918 F056F123300800001 BIB 4 4 F123300800002 REACTION (29-CU-63(A,N)31-GA-66,,SIG) F123300800003 DECAY-DATA (31-GA-66,,DG) F123300800004 SAMPLE Superconducting ceramics of YBCO was used. F123300800005 STATUS (CURVE) Figure 3 from the reference. F123300800006 ENDBIB 4 0 F123300800007 COMMON 2 3 F123300800008 EN-ERR-DIG ERR-DIG F123300800009 MEV PER-CENT F123300800010 0.041 1.51 F123300800011 ENDCOMMON 3 0 F123300800012 DATA 2 46 F123300800013 EN DATA F123300800014 MEV MB F123300800015 9.885 4.561E+01 F123300800016 10.021 5.058E+01 F123300800017 10.115 5.612E+01 F123300800018 10.248 6.107E+01 F123300800019 10.342 6.775E+01 F123300800020 10.474 7.304E+01 F123300800021 10.610 8.100E+01 F123300800022 10.744 8.899E+01 F123300800023 10.878 9.777E+01 F123300800024 11.013 1.084E+02 F123300800025 11.147 1.180E+02 F123300800026 11.324 1.321E+02 F123300800027 11.503 1.493E+02 F123300800028 11.680 1.655E+02 F123300800029 11.899 1.870E+02 F123300800030 12.032 2.016E+02 F123300800031 12.165 2.194E+02 F123300800032 12.380 2.387E+02 F123300800033 12.511 2.549E+02 F123300800034 12.727 2.772E+02 F123300800035 12.945 3.073E+02 F123300800036 13.161 3.375E+02 F123300800037 13.335 3.637E+02 F123300800038 13.548 3.882E+02 F123300800039 13.764 4.222E+02 F123300800040 13.978 4.549E+02 F123300800041 14.234 4.901E+02 F123300800042 14.449 5.280E+02 F123300800043 14.662 5.636E+02 F123300800044 14.875 6.015E+02 F123300800045 15.047 6.361E+02 F123300800046 15.260 6.789E+02 F123300800047 15.473 7.177E+02 F123300800048 15.726 7.586E+02 F123300800049 15.936 7.870E+02 F123300800050 16.272 8.314E+02 F123300800051 16.606 8.619E+02 F123300800052 16.897 8.768E+02 F123300800053 17.269 8.917E+02 F123300800054 17.641 8.982E+02 F123300800055 18.011 8.877E+02 F123300800056 18.338 8.693E+02 F123300800057 18.665 8.433E+02 F123300800058 18.990 8.103E+02 F123300800059 19.192 7.792E+02 F123300800060 19.433 7.420E+02 F123300800061 ENDDATA 48 0 F123300800062 ENDSUBENT 61 0 F123300899999 SUBENT F1233009 20140918 F056F123300900001 BIB 4 4 F123300900002 REACTION (29-CU-65(A,2N)31-GA-67,,SIG) F123300900003 DECAY-DATA (31-GA-67,,DG) F123300900004 SAMPLE Superconducting ceramics of YBCO was used. F123300900005 STATUS (CURVE) Figure 3 from the reference. F123300900006 ENDBIB 4 0 F123300900007 COMMON 2 3 F123300900008 EN-ERR-DIG ERR-DIG F123300900009 MEV PER-CENT F123300900010 0.014 0.91 F123300900011 ENDCOMMON 3 0 F123300900012 DATA 2 28 F123300900013 EN DATA F123300900014 MEV MB F123300900015 16.533 2.886E+01 F123300900016 16.558 3.016E+01 F123300900017 16.606 3.237E+01 F123300900018 16.654 3.474E+01 F123300900019 16.704 3.795E+01 F123300900020 16.753 4.072E+01 F123300900021 16.825 4.487E+01 F123300900022 16.895 4.856E+01 F123300900023 16.943 5.165E+01 F123300900024 16.991 5.543E+01 F123300900025 17.061 5.947E+01 F123300900026 17.154 6.550E+01 F123300900027 17.267 7.086E+01 F123300900028 17.359 7.736E+01 F123300900029 17.495 8.592E+01 F123300900030 17.608 9.294E+01 F123300900031 17.741 9.961E+01 F123300900032 17.897 1.077E+02 F123300900033 18.030 1.154E+02 F123300900034 18.229 1.258E+02 F123300900035 18.404 1.348E+02 F123300900036 18.536 1.419E+02 F123300900037 18.711 1.493E+02 F123300900038 18.863 1.558E+02 F123300900039 19.015 1.611E+02 F123300900040 19.188 1.665E+02 F123300900041 19.340 1.737E+02 F123300900042 19.534 1.795E+02 F123300900043 ENDDATA 30 0 F123300900044 ENDSUBENT 43 0 F123300999999 ENDENTRY 9 0 F123399999999